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LEAD INDUSTRIES ASSOCIATION
O CAST 41K> STREET
*
NEW YORK 17, N. V.
December ik, 1959 SUBJECT: "UIJRA LOW LOSS
c t r a mt c TmgzcTRlcam
to Members of the Lead Industries Association:
Enclosed Is s reprint of an article entitled "Ultra Low Loss Ceramic Dielectrics," which appeared la a recent Issue of "The Journal of the American Ceramic Society."
This paper vaa presented by Bunas arl Koenig before the Electronics Division of the American Ceramic Society at Asbury Park last fall. As acknowledged on the last page, the work vas made possible by the LIA fellowship grant to Rutgers.
Additional ccples are available at no cost in quantities up to 25 and at $9-2C per hundred in larger quantities, as long as our supply lasts.
Very truly yours.
Secretary
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Ultra Low Loss Ceramic Dielectrics
byM. M. *UNAO mni J. H. KOtNtt
Tha tkjKi mt (Mi fuu tu to derate} uhra tow teat cersalc tfitlMtiks. Tto fouiblt fi>Mi W tha dialactrk tow al cruk Min were iK luiyiH Uitorttki&r. li^tfiAMU) fcodiM, 4nl|f4 m th# Wait f tkii usljiis proeida
to Hn tow dialactrk tow.
o
1 - i -
ill tread
tohn frnfwrnrr rWrtMotr n|tii|4nrat
Tbit m|iurrd Ik nwwmil
4 ultra krw Io n
errata* ituU( Him hit Itrru nlcoWie wt*i
un4cf a\ ibt tlirw iwrt dunni mrut iriK ilO(li
uwh d I hi* wk ha* a*a lrw frtelrd i tar literature.1
IVtr ratlirf data wrtr rrvirvd W* mL| ihr ptaewt
Itomril italviti
It fMtIUr Cavaaa tf OtototMc Ui i to Cirsult
If an i i rln in' told h ai^ml lit a netdrnwf which h uadi i4 rrrlaia dtrlrrlr* wid Ihr rtnirir told ihea w act ai a hr* attHfrd utrt mr oiV, Ihea Ihr dtflrtlrif hat mo dirhvtrtr |>m Hut aiiul drlrtlik* hatv kanr tovt, ill uhwh it* Ihr a^itod rlnlrtr rnrt|t I* (math nc*rtltd In tout t5w t ihr rlrrlru' told Ar *ri i Ihr drlMrr. ihr
pbaw an{W town thr told and rlntnr cwrrrul tfeaild be Ina than HO*, r Wl* - 4. tm I U Ihr "ha aaftr."* t'Mially m I (j*w toto) re Ut I (dwipalto total) to uwd tu *\ vrily the km <Wtrkr U dktoctric.
Aav |nmu n\trtiB| thr and rlrrtric cati0 <d the dickrtric u(u heal eaerjry cue be a cuusr d darWctrk tot tdectncul ciadwlta *4 a drtotne aad tint U| of the leieutatow of a pminmt dtp>Jc (or id aa iaduccd electric di|4r uiaaret at ultra hi<h frequency) with rrrpccl to the lhaw ui|lr i4 aa apptod rlrrtric told are (uonra cum d dirtrclrir Ion. Thc*e kmr* arr <d aa electrical crifia ta the nurwvtjfw aruae When a dirlrctric riU of a mixture d turn it tu-rr mtrruK thr Maswefl-Wajcnce type cd 4i*
hnnihl al |W FaO Martini *4 Ihr lOnrtnaur* Dhbto, Thr AnirTHan Crtamir knHy, Admryr Kit, Nim levy, Oclutoe
|l', IV.Vi Krmvrd Octutor S, IMh; nrtod nfjr reoHrad
April 77, IMi
Thr *rm arr. mpevtKrl*. tnf*b uaiUU aad dtolw,
1hkiil d Cman, Rutfret, Thr $utr t'tmnHy fYfrtM kn-l*. C'Wirari* |)A MinttfAdM, -42577, Saliet, 8rh>a4 <4 Ceramic**, hvtftn, Thr ftutr Vatreralljr, Thr I'atlrd Hair* Arm) tofnal knrtirh Libnl<ry, Fet Mw-
aawlh, Nn Jnwy.
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N 1955.01
September 1959
LIA22440
Ultra Lam Last Ceramic Oieiettria
444
electric km appear*. Thi* km is dur to u accumulate* uf
electric charges i Ike {rain kamUrics vilhia (be mistore.
rmallr, the Umrrlicil dielectric cesunt tad pien
(tclrf <4 ibrt^(tQpt tubiUDCT (a pvkturr *d to Burr
phasn, Hie a ceramic body) art
in terms <4 the di
electric |mqftir*<4 IW cum)Nmt |4isei Seven] iVnir*
have been drtf*<i*d rexardmf this, mrii as Wciorf and
Lkhtreccker'i (rmU,1 Hmp^maa's tbwey,* and NM'i
theory.4 home <4 tine ibnric* Has takes iato acrrwst the
km due Ui tbe mechanical interact** betwees |>hari. Fee
an ullrs toe km dwWctrir. ibrrr is a pmMity tkat this V-
Cimm an tsu|Hrftaat part id tk mechanism.
F\e cxamfdr. cs*wdrr a ceramic body nuioia( pirath
rV-lric material *uch as crystalline tjuaru UVu aa electric
field H with a hn;h frequency is aj^dsrd l* a ceramic, each
pebcktHc rn *laJIe in it viB lend to nvilUU srlh the
same frequency. TV anqdttudr w<dd be vets. very small,
since the crystallite* art sornatitderf by a cUwsfduiw. Ihsrto
this oscilUU*. s k u m] m <4 frequency srill be leorfatcd
at each crystallite in thr c t t amir bndy. TV dmi{u(i t4
IV wamd wavr energy drjmdinK u q tV elastic |efartirs
4 tV ceramic sriQ c*uw a dirUctfar k*s.
Even though a ceramic
mil nmtam any |iii>eMric
material. IV same kmd 4 mrchamnal Im may occur A
siin(4r il1ustrali* 4 this is given in Fig I, so which a di
electric c.<ntains a li| cylindrr with dielectric runslant a,
embedded in a hterxirmniui sutnUare *4 dielectric ntfHUal
M. If aa electric Vld. K*. is a|<pkd, there will be a kace
(trcqur) no tV era! If e( > then tV trequ? sriD have a
tendency tn decrease If t < *. tV reverse will occur.
Thus the i<id srifl tend to make mtatamal tikatim with a
frequency of 3 a. generating a wnmd wave
If tbe flux urd f*e making a msmir U4y ** not aiflirint,
numerous voids wiU be fmnd in IV fired My. Since wane
*d tV raw material* uwd in a ceramic Udy are fa* bru-ieg
materials, tw will V |si4wtd wbea tV tody is bred.
TVtrfiee, evro if suffW'senl flux is uwd. there will be
ta
tV body Voids may weaken IV binding <4 tV rrystallme
phase in tV kdy and wit! facilitate the vihratk* of tV small
* Karl Lirbteimkef. **IWtric Oausst i4 Natural and 5>Wthrtk Mixtures," /*,* Z . IT, lift- S* (lJCftl
* l A (I hntn'-nun, "TV CilvUila <4 Viria Hiywral C*a^tets<4 llrlrripiieiii SiUtamn: I. iHrtrelric Constant* and Oaduclivriin *4 ltiiure% C*spM*d <4 t**<r>pir fJubi,awnlM A mm Vkw . It, KV\ <4 (|KW)
* H' Ninel. ' Ffkvfft JVtnlwlia in Miiiwn *4 Two |M rln inn is aa kWrtrir IVId isd CilvUtiai 4 the 1>m AngV
in Oui^liliairr hetw%" Atm Tie* , 12, 4|0 (tf&l)
partsdes under the Vftucaor of aa applied cfcctric held, than fmntixi a auuad ant. Them voids cma V miaiauacd by proper technique ia the maple petparmtsun.
la thr afurtmentimed cases, the dielectric kwarn arc function* of the elastic properties of the ceramic as vt9 aa thr dielectric properties of thr emipcoat phatra. Ei-
lerimnlal tests for examiumc the lelatkct betweta the dielectric luns and thr tLflic property <4 oeranuc bodies arc rerssary. TV result is nut availatilr at present but will be
wdcrtika in tV near fstne. W4U*tmite was fiend to be an excellent crystalline phase
be ultra k/w P*a kdin in thr earlier work.1 TV dielectric lowcs id mch wutlastunitr tvj* budin are next riainihred ns a funrtb* id tV si4hat<ailr content.
Figure ?(>4) baa summed diagram uftVdirlectricloa* of a cries if wi4U*lunite bidri TV }(* dot-dash hae reprt* seats tV k*ss due to the wnUast*tte crystal* and tV matrix phase (cias* and Irad alunxmum whcale). TV ayqmnimatr shape uf tV esnt may be estimated by niiq Niesrfs cqtsati> 4 UVt tV ratio id tV dsrlmnr noUan 4 tV seal* liUioitr cry4als and tV matnx |fue n oturfy I. the curve can be a|*|w<iximatcd by a stxat^ht hue The brokes kar represents IV dielectric Vu csbsd by tV ufd iodudeU a the bide This |m waild herrsv m)adlv srith decrrasioi dux oolcot bemuse tV lack 4 dux srill htndwe many vuidt TV upfwf subd line rr|ee esti thr nsuhant kiss which nu^hl haw a Ruaimwm Value at a certain sdUrtMite conntiatKO
Asaumioz that tbe Voy ha% thr |rptr unust (4 dux and has been fviqwriv falrieUd. the dirhvtiir koa due to voids should V \w uua3 TVtef.er. the main part of thr dielectric k*s4 tV ceramic hdy wiQ V doc tn tV ofhiOaitr crystals and tV rnatitx phaw Stare the dielectric baa t4 the sifUMusitr crystal is fixed. pofoUy the tint tray tn decrease tV dielectric M 4 tV body is to se a matrix with a lower dielectric Inu la this case, the roultaol dirlrctrie kaa arid sK V kmered (x shown by tV lart t 4 curves is Pq. 2(,4)). Hut. if tV dielectric k* 4 tV matrix phase wne kmrr than that 4 thr v>fU<oilr crystal*, thru IV dirIre* Irir |mu v . smtlaMtmitr nortstnlkm curve would not have a mimmum. as in Fig. 2\fl) la such case, it is brtter to wr clan itsrtf as tV dielectric, and three would V no nerd to use wiflaMtailr if thr (Kirpmc is tn make (hr kmrrt dirfectric ins bode.
Knee tV matrix phase <4 thr body r a (Itn ir a mixture nf a flaws and a small amount *4 little crystals Ike Iborrtkxl dielectric kiss <4 flaw** in rrlatkai tn mm(Nwtio cma V rnerrlated srith thr resultant dielectric km 14 ceramic bodies.
M*t classes oattain sihnmsuyzen wtwl as tV main structural units and several kinds 4 |w*ilit kaM 1'suaUy, wane uf tV fwisitive i<o are tnnind to SiO ortreki with rather weak fatrs which may be <4 inosr <r rm-ahwt charartrf Heciuisr tV districts* if SiO nrtwwks in tV ftaaa lacks aa orientational rezularity, there must V many p* initial minima fin tV pmuivf was It run V amimed that
WiiHF."
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444 Jmirwat f Thr American Cmmk S0ri*ty--Bmm*gmm4 Kfnig TtUt L MoriuhW f of Svrol lorn Aceorrflnf fwhf
u* Na* K* Rh*
Cs* o--
0 09* 0 17* on
l ' 2 42 a an
Re**
Cs'4 8r** Ba**
toot
0 0*4 0 47 om lift
* AP* fc** V*' La**
0.009
0 082 on 0u 1.04
C** 0 0013 * 0 010* Tl** a.M Zr** 0.37 Ct** 0.71
Vq I. 42, No. 9
Table 1.
at tom AccarrfVf la tabs**
f- 25 a o- fil Rr- 110 1- R 4 0*" 30 0
U* Na*
* Rb* Cs* Ca*
It 7 20.2 <2.3 * I 71.3 27.2 Si 4 0.1
* TVk, ubkr *bnv* Ok hfeb I Ca*.
Mf** Ca** h* Ba**
fk*'
It 4 34.0 40.1 7*4 01.3
*** 22 TH* U 1
IV4, Be'4, IT,
tkc pwlm iott arc dutributH ta ausy potential db arrrfdia{ |ti tbt U*i <4 fUtialica) b c Hu mi.
TV t",(nl'a' *ner{y a positive km Hh a ebarft i V pm by tk cqaatkm
r-r4- Vf
4 (mm hr artilhr) ekrtrir pntrotial ekrtrir kM t<n|lh, at (hr pmfcim 4 Ik ha.
pknabikr rrf the ha.
tMpar a oar when Na ions <4 Na |ka arc replaced by
fit ur Ha hai Since thr electric chant erf ft (oa* Ha) ka it Ivicr that erf Na ana mad the pirfartfability h about 3 te t
kart that erf Na ha, the depth erf the potential wait fie R (or Ba) ha miK1 be mute than twice that <rf Na ina. iwftim
that 4 aid are rf the same vahr fra the two glam
TVrdiet. the deep p><ralial wetH can hr realiied if the nlmr and pnlariJabOrty erf the tom are Urge It wiQ be ward m Tal4r t that fia and Ct have hi^h eketroaic pekar* Ushflitin
Robert*1 baa cwlraiatrd pnlariaabOitart erf inm ia tiaplr (tTtuk. The bade r|mlha fnn which the pnlariia* biiilin have been caknlatedia
- Z~* - tl\K - UA* 4 2)
r rn ihar rf the Mil ceff ia the repeal lattice divided bjr d* Makr rf whVr which it naif.
^hnahike ptr ia ibrak. |hntiUkv rf ibr n ipetiw hat A" ihhrtnr caiUal rf the crystal.
t*in( the trfxrrwd data rf A* of a aamber trf crystal*, thr
pidanJsMVtin Have been estimated and are tabulated ia
Table It
The hrrcomg equalha ia based cm the oi.k.a
to obtain the prrfariratrfbtic* based tm thr Ci a ait system,
thr pirfarirabiktira tabulated alm\t *b"uld he ditided by
4r. It should be anted that the pnlaritalMlitir* trfrtainrd be
Rirfwrta1 wwlude at only the rlrdnmir part* but also thr
inair part*. The thdnak prlarirahibtir* ran be amu card
In hatr af^ifiaimatrlv a
ealue im ^erliif rf thr
crystal atmrtore in which thr ha exist*, bat the hair p4ar<
babdi'irs should chance drpeadiac oa the crystal rfwlat
fhrpknl tihrrts "IHrkrlric Ca^UiU and hhnuhket rf b m Smr iJt CrjiU^ aad lUriuui Ttuult," fi^ Ktr, ft, 1214-30 (1M0|.
RpS. Vohdkrrfi
The atnxtim erf flam is sne otAa thaa aaost crystal* uthat the prlarirabihtkaof km* in the glulnmld bedirfertat fmai tbuse listed ia Tables I aad It. NenrtKkm, it caa Ur aimed that the when <rf atcnilaV are the aam evra thooch the ha ate ia the crystalline or ia the flamy state.
Rhea aa rhrtric Wd is applied U the (Urn, dielectric
phruaha. which belonging,d rf ehcvnmic aad ioaar polar* iaatkm. w*B appear.
r - r+ +
f- -
4
abut fsw u dae to the dhtatha uf the eketna doad of
thr hue by the ap$*bcd field;
is dor to the drifting <4 the
ion*; ooe part 4 which
dae to the samB shift ia each
potential well aad another part erf which (^*m) n dae to thr
lomaccacat erf the intributia rf aB the punitive bum ear
aB thr pteetid weds aader the tnftaracr erf the applied ehee-
trir held Since the pnrfmlrfhty erf escape erf roe powtive ioa
from the potential wtfl n pnprtkeul to the exp |-((aMr
/ADI (tr4 3). r*mm am*t depend atroaplr ou the depth
<4 thi* potential weB aad the trmperatore. If the
force between thr puitm km aad the Sirf) arlwtci is suft-
cicfttK tac so that the ptmiul weQ fur thr poathr km
is eery deep, thca the dkketric bos dae to ^*** appears only
at very kick frequency. such * infrared ^vtical frequency,
became thr ie*t**iy bare be thr daft *rf thr ina it rtn| ia
thr drep ptestu) weft. IWlne 1 on dor to
tur ap
pear at very in freqnracy bat duffein at bigk fiequeonr
(mtermrdUu radio frequency rxige). The teasna it an
frrfbfw*: Sore thr rale <4 Irurfcf <4 thr positive km fra
(me inaeatial well In swtbrr t* leifmctiuoil to the exp
|-(('b m *m thru the rate * mulkr be drrjwr pmeatiel
wtIK and k*wt trat|wratnre. If thr rate *4 tramrfer is mil
and the fmtartw-y rrf the a|<f4wd brid w Ucb, the positive
km do M have aufirwnt liar t* frarh thr state <4 eqai-
bhritm dr4hlniik wbkh L rapidly ckingai with thr
a.<. drethe field A* a remit, ;brtr is ili an notribt-
tkm fnas f*M wbrn thr ImjarUfT is wifbriraUv ki<k ta
*arh rasrt,
and m oatriUk httlr to the darketfir
low ia the rad (rrqarwry ranee
Thr f'daing rvam|4r due* thr nay thr drf*th rrf thr po*
teatial well sfnl thr darlrrtrir kra at drffvtent freqaearwa.
It ha* brew stated that thr Im due to
apfwwra at ap
proximately the frrqurory p\t* by thr eqnatkm
avq (-?ir)
where a is
*ec. *. Awcmr that a certain Na (iua
show*a Inch dwlntrirkoaat |(f w Mabat I Inc)
If the Na km n replaced bv Il< e Ha km and thr potential
depth become* twice that trf the Na (Um, then lc tktfba
Ml
'w^V'L1
- ..uiywri
gyp*1:-
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Pff!J il||H!JW1 HI '-l- ,um|
Ll *22442
tm
--m i-
ScvUmbo- ISM
Ultra Law Lwu Cmwtit Dirledrici TtWci. > ihoftor nf, Tow I ot Wtrmt Fft^wmciw
* Ti *rp
lufi neqmncy
t Ta "ft
-ft
i i *+J
10 too *+T5
too
10,000
*+ idooi
Low flrequrwy
t1 *oT|
fi hr,
01 01
0.01 0.001
*+r *+r5i
* m CMlnbjtt Ip . when $ (I/r) <** + , Mt vW> (l/Ti) wifi contribute lo lu I rWa m k ipnipjpmty 1/7* hit tiB not pptrflpti ftrtktr flips XfT Cbat
445
mmTt
r+*n
V
101 tOOs ram
to x too
tot
Vmn ioooi
to
x too
t "* m 0*4 tpl < I
Tobla IV. Fnvnr Foden of $mfl Clous According to i. M. Simh
ISut ford &0, (SQ %>
o oaa
Xa*U(SiO 70.4%; AhO,*^; KaiOICO^; CpO
Jl^)
0.0006
hafUx(SiO. JO-OCi; MblOOf;; AIA K3: HaO
*> 0^)
0 eou
rtfU(SiO7.r;; AVOiao^; Ka,OSt^; two
a.oS; rtOMO%>o.ooio
* liautox.
(
Ba fist. k (ivti by the kfioia| <qii(k, iMsini h k tV not,
resnhmc in * 10*1 which k a very low frequency. Go<R(a(fll)y. iVrr MU br ihnnri po dielectric kx dot to
am tV Iftqwncy nh{t (nMi about 100 c.p %. to ihot I0* c p.t. Ttedun. (Uw* nt4ntfl|( deep potential we0s can V expected to Vw a auxiawa dielectrk u m, Ike km n. frequency curve, at a kw lrt^wq`. At abnut tkc Frequency ranee where Ike dielectric constant berm* to decrease (Fit 4). the phase at f*k delated e*npared to the phaw at the applied held A a remit, hi*b dielectric hm appearv Generally ipnkinc, when the dielectric nUflL . for flow frequency k appreciably hither than the square id the refractive iwki a f< iptical frequency, a dielectric tnu should be expected due to /*, at a certain frequency rup where d* 'k k lar^T. w k tV frequency of the a<. held.
The fotkiwiai ittustratnx (Table 111, Fqt 4) abow* the behavior at the dielectric constant and purer factor at dif
" * v i *r,`
dwWclrir rnuuant a: lay ipoM frequency dwbrtnr oaKUat MtnrduUIr (<0<rwiAf tkr applied held 4Wuk pptUM after the aplwtia id a cu*t hid. rrhuUna thna.
TV (orrt| Kputioa k far shr <w rcWutM tine, tVa there k man thu ox itUabaa list
* " * + i *fi*+ rrsn + i sfc- r*c
Actual fUw cmtain many kinds of potential weflk with various potential depths. The explanation erven above, however, can explain qualitatively the tow float character at glasses molainvnx deep potential velli
Examples d dielectric lust for arveral |tum are damn in Table IV. It k dear from these data that glamc* eralotmag ions such nFbnr Ha. which bate bich elcctrraif p4sms> bihties, show appreciably lower dielectric but thar does Na (Ian. Pure laud silica dor* not mnlam fnripi inns an that dielectric Vm due to iir movement skaild be very low. U*ben a flaw eratain* fiwrtm kns. flufher valency, ns wcU as higher eWctnmic pdamability f the kn, k ntrenary for the (Ian to have a he dirkvit floaa
(I) Summary a/ BawsHcel Aad^in
When a ceramic crouds uf tm or nrr phases, the |4kcipal dielectric |nu k due to the dielectric luw td tV toauponrnt phases and may be due ahn to the Hade floss of the ceramic hdy To decrease the Kx, the falKia( conditions arc mecuary:
(1) The diekrtric knars cd the ctnapramt phases (crystal phase and binder phav) skaald be as flow as prusihle A flow dielectric bus of the binder phac can br realised if it eratains sons such as Pb, B< Tt Cd. and Ha, which have fltifb valency and kn{h electrnnic poUrimhalitr.
n i a h t r a in . . . i t a ............
446
Jmtrnnl tj Tkt Amman Crramit Sacitty--3nmo[ and Knenit
VoL 42. No.
TaU* V. My CoapoiHion* |l %| ant frepartlM
U-I RSI KM KM KM
KaQtfwilfoirtw
0.0 uo to.o 80 0 56 8 80.0
It
No. 4 bal day BariannarbramW Lead hwflieste hirWMtb triwidr
JO 0 10.0 too
20 0
15.0
M.O
10.0 15.0
ISO
20.0 M.O
20 0
15.0
10.0 U.O M.O
10 0 5.0
Sikes
2.0 2 0
Uitn. m, (*F.)
Water abwvptfo Power factor (*A) fat 1 ne. ssf r ms tasp )* Dirfectric nouataat* Lorn factor ()* JAK-l-10 grade
2100
0 00
0.01*
S5 om
U7
2100 C.00
0.008 in 0.008 L-8
2100 0.00
0.017 7 83 0 128 L-7
2100 0.00
0 014 8 82
0 101
L-7
2100 0.00 0 012
7.15
0.088 U
021.0000 0.014 7.40
8. MB
L-7
These vmfocs are awage malts af at hast 10 spaefoms.
-
(2) Reduce tbe km due to daKic cam. For Um
poac. It n
that () a iwpieMkctnc Mtcriil be
used m (be principal component *f ibe bodj; (I) the pria*
ciprt dielectric constants
and*, of the principal crystal-
foe |foe rfwold be frtv the tit tad they should be il-
toet equal to the ddeevir cooftaat f 7f. bender phase;
(r) if the demure d the diekctric nttaati d the phase* a
relatively Urp, the paia d the principal phase fkald be tarty ipherical ic chape; (f) die (tun' or binder phase
should cenat the crystals tight enough to prevent a ms-
version d electric energy to mechanical eaergy; and (e) the
<3) Cod the ccraat .dj- very slowly, the law* hint the same as for the annealing d a glass. During the a--pram, rearrangement d molecular wtaorti r was in the fim take* place imhiog la aveaubhodpntioa d the artworts and the n m. 1c this case, the potential crib far the was can be expected to be deeper than those d the manorsWd glass.
(J) hdllsfisd
Dielectric constants and power (acton were measured at
1 me and mom temperature using a Booutou Q meter.
Sihtr paint was need as the electrodes to provide a better contact with the materiel because it caa flow into the minute dtpnfoum on the surface of tbr specimen Cue eras taken to paint on enough silver so that there wm no rriiiteiM on the surface, measured between the opposite edges of the specimen. The sOvcied specimens were dried slowly on a foH plate for JO minutes to about 500*F. and held them fen 1 hour to make sure that aU the organic solvents of the surer snipemi on were evaporated. The spreimem were cooled to room temperature ia a desiccator.
During the entire electrical test period, the humidity and temperature must be fairtv constant to obtain consilient result*. Tbe ermditino* (temperature and humidity) can be awurt to be constant when tbe capacitance and Q readings with air as the dielectric remain the same.
All uf the matured forties, including those sbosm in Tables V and VI. were analysed by X-ray and prtnrapbie methods.
IV. Dtsewsslan sf In suds
,,
A WUftgm batch d the cwpoitin eras weighed, and _ Sun cc. d water were added; the hatch was wet ball foiled
Referring to Table V. bodies ESI. ES2, and ES-3 were fivxed with lead and barium, bodies ES-4 and ESA were
far 24 hours and then dried completely. The dried hatch was
pawed through a foempuharim. mixed la a Lancaster
mixer for 10 minutes while adding C% water by weight,
and then mixed for an additional 20 fonutr* la the Laa*
caster. The material thus prepared was prejsrd into disks
2 in. la diameter to irmidr close owlart d particles and to
TobU vi Body Composition M. %) ofo fropwtws
fotiate prrhmsnary ihetmral rr*cti><ns during a peefiring to |fcd*F. The ptesed disks were fivefired to cfcsniaatc the voids cnnxrd bt' {svw rvnhtiia (nw the oaitpuonti and to aasttmsr inteinal stresses, which would otherwise de tehp in the grain boundaries, in the final test specimens.
The pcefired dnkt were crushed and dry bail milled for about 15 hours to |a a 200-mesh screen. Sis cc. a SuperM binder (li^ sdutinu) wv*e added per 100gm. of powder and mixed in a Lancaster mixer for 30 minutes. The p<wdcr
NV 424* mdUatmite Frit JAI Krit JS2
MilaWMfCri
Water itMCptaw h>*f U<ii< (Cr) (at 1 me. and rasa temp )* Dwkctnr pmUst* Lma lacVW 1* JANIIO grade
IK 1 80 0 40 0
2000
o on
0 0724 8 04
o
L-5
J* *
80 0
40 0 900 0 00
o am
7 5R 0 1| L-T
was pressed ratn specuneni (disks iptrutiauldy 2 in. la dfoarUv and 0 1 in Ourt) at TCOnlh. prr tq is., fired to the
Farr Coumamowt
maturing temperature in 4 twain, soaked at that tesnpcratafv
1*1 1**
fr 20 minutes, and oulrd very aforty to won tempermtnrc
no
I fo dining appmamutefy 19 boors. (2) fitpnhfodlsdN
KO.
MO,
NaO M>
Several experimental forties wm designed bawd on the
UO
M0
17 5
20
55 80
54 0 57 5 20
85
previous theoretical diiruMwn. The cumpositinus cf some
d these forties are grim in Table* V and VI.
*TW values srr average rrsnhs 4 at kraU 10 qiehnu
!
i
r
l
i
puwswyw .l s j u I n i i.w mmf i
Sl ww
1IJIH Ml
. ';, v-
;.
.
jiumtt
*-
^ . . . i:.--^ .
'* ;s*
.- . .
f \.U
_-
1
September 1950
VUf Lme Lm Ctrtmic Dieketria
447
nrit ITS in. the ternary sj-ricn PtiO At/VSOi
(Pig. S). The calculated batch lurapuatiua of melt ttt was
fabricated ialo a ceramic hdy The body hat a firing range
of 19UU* to I4G0*P. and abnws a adf-glaring jeipcrty.
Bodies ES-4 and ES-S, which were fluxed with bssmalh
instead of lend, show the same peeks as the other ES bodies. -
No report eras found in the literature of nay baamth com
pounds that cnindde with these peaks. A empoatioa
riaular to melt 128, but wring BiiOi
of PbC> sms
fabricated and fired to maturity at 1600*F. The fired body
was analysed by X-ray and showed the aamr peaks as melt
128. Probably biimath reacts the aame way as lead aad
forms bismuth aluminum silicate similar ia struciarr to lend
fluxed with bismuth ud banuu, Md b>dy E$4 vs fhoed
with lead. bismuth aad barium. All id the** bodies were
fiatod to lute lin luv diekctric low (L-7 aad L4, JAN-I-
10); they prmnird hrary muddying cation* swch a* Pb".
Bi**, and Bi***. which have high vakocy (ia ctenpartvai
with the alkalis) and high ekrtrooic pnlariiahiHtie*. This
conbrms to the pminn Ihnrrtkal uphaitioa d deep
potential vefii.
Table M jnti Iwn body ooopuritiuns ia which all td the
{Um phases were,preffitted. The craapowUrm* r4 the frits
rr aim fh eti is Table VI. These two bdict provsdr a dear
campsrima at the effect of heavy cat*on* with high tlectnwic
polarirahibly no dieketrie kat
The {Uv phase id JC I ooetaim Na0 aad K/l and the
dielectric law ts relatively high (laa I 7.2 X 10 *<). The
presence o? alkali inns increases the power km. Where
BaO replaces the alkabs. as so JK2. the dirketrit craretaat
b somewhat increased. The pnrer factor bnweter. b sub
stantially reduced (tae I 5.7 X 10 * for JK-J). It ap
pears that lead aad bamm UftlkT
the best flozac
system id that tried lodate h* ultra low lnuteraair bndin
The X-ray patterns nine that aQ id (hr Isdb cimtain
flwidUstanitc crystal* Bodies ES I. ES-2 ES S. and ESA
ihw a few other peak* identified as kad aluminum whrale.
Thin section* of the bodies were ouuained petropaphiaHy and were found to contain crystals, glam, aad samO tiamiaf cd raids. The cryeuk, which were eamfl aad id irregular shape, were identified as lend alaniuiuwi wlicate by X my. The wuQastomtc crystals cannot be saea without croamdKirub because the refractive index of wnflitonite is rery doa to that of the mneraua medium.
t'aag maned Nicola some of the peedoeninantly larger woUastuoitc crystal* are very dearly lets. The remaiaing tiny crrsuK are a mixture cd widUxtnche crystals aad knd ahmnaum silicate crystals.
It can be noted that although the fired bodies contain woflastonilc crystals which have aredktike ihqes. they have dim bar dielectric losa. These may be explained by the following: (1) Tbe diekctric constants of tbe osnpocet phases are reUUvely riose ( id wnflaslonilr crystal ill; of bodies T. 14; cmwt|umtfy tbe of tbr binder phase is approximately KS). (2) Tbe nU*t<*ute crvAaH are wefl bonded by tbr tiny crystallites, which ha\e aw-ibme paperty. and tbe glass phase Tbrrefine, tbe clastic fcna due , vibnUna of tbe wtdlasttnnie r> ul* may be rery small
V. Condualau*
I
(I) ExperimcaUl Unties, srhich were designed on tbe basis of theoretical consideration*, ptoridi lev sdtra low
(2) Tbe nhra V*w Im rceairic body should br oapuad td a W>w has priarifKtl crystalline phase stach as wolUxirvitc with a binder phase cetsiiwifi brsn* aodtfvr ( cwthmt with hirh ekctric pidariiabihtirs such as Pb* *, Ha**, and Ui * * * It appears that Pb and Ha together pcoeidc the best fluxing system id those tried to date for nitre low di electric to** ceramic*
The th><r want lo arlowwledge the advice sod ima u s o td Etna* Jwwmptrbi d thr hstim Srh*f rf Ceramics The pi> eat wtek was yamd hr tbr Lead Industries Aswciatson Earbn nil which provided tmckgoauMl he this iavrsligath* wvt ifsosnd bm by the Signal Gaps Bcmirti aad Omifmeat Uhiawin
;
y
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p, --ujwwnoi. 'M.is.PTy ' <?
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